HT Semiconductor pxt8050 free download

File name pxt8050.pdf

PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1 V Base-emitter positive favor voltage VBEF IB=1A 1.55 V Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz output capacitance Cob VCB=10V,I